Influence of active nitrogen species on surface and optical properties of epitaxial GaN films-Reference-Cited by-同舟云学术

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Influence of active nitrogen species on surface and optical properties of epitaxial GaN films

Published:2016-03 Issue: Volume:661 Page:461-465
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Aggarwal Neha,Krishna Shibin,Mishra Monu,Maurya K.K.,Gupta Govind

Funder

Council of Scientific and Industrial Research, India

DST (GoI)

SIMCO Global Tech. & System Ltd

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference30 articles.

1. High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures;Nakamura;Jpn. J.Appl. Phys.,1995

2. Current status and future prospects of GaN substrates for green devices;Doi;Sens. Mater.,2013

3. Characterization of a GaN lamb-wave sensor for liquid-based mass sensing applications;Pantazis;IEEE Sens. J.,2014

4. Molecular beam epitaxy growth of GaN AlN and InN;Wang;Prog. Cryst. Growth Charact. Mater.,2004

5. Role of excited nitrogen species in the growth of GaN by RF–MBE;Kikuchi;J. Cryst. Grow.,2006

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2. Carrier transport across PtSe2/n-type GaN heterojunction;Vacuum;2023-12

3. Carrier Transport Across Ptse2/N-Type Gan Heterojunction;2023

4. Inclination of screw dislocations on the performance of homoepitaxial GaN based UV photodetectors;Materials Science and Engineering: B;2021-01

5. Study on the effects of growth rate on GaN films properties grown by plasma-assisted molecular beam epitaxy;Journal of Crystal Growth;2020-04

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