Role of excited nitrogen species in the growth of GaN by RF–MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Atomic nitrogen production in a molecular-beam epitaxy compatible electron cyclotron resonance plasma source
2. The relation of active nitrogen species to high-temperature limitations for (0001̄) GaN growth by radio-frequency-plasma-assisted molecular beam epitaxy
3. Nitrogen species from radio frequency plasma sources used for molecular beam epitaxy growth of GaN
4. Control of nitrogen flux for growth of cubic GaN on 3C-SiC/Si by RF-MBE
5. Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy
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3. Effects of nitrogen flow rate on the morphology and composition of AlGaN nanowires grown by plasma-assisted molecular beam epitaxy;Journal of Crystal Growth;2019-12
4. Influence of plasma-activated nitrogen species on PA-MOCVD of InN;Applied Physics Letters;2019-11-25
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