Possible electrochemical origin of ferroelectricity in HfO2 thin films-Reference-Cited by-同舟云学术

Possible electrochemical origin of ferroelectricity in HfO2 thin films

Published:2020-07 Issue: Volume:830 Page:153628
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Glinchuk Maya D.,Morozovska Anna N.^ORCID,Lukowiak Anna,Stręk Wiesław,Silibin Maxim V.,Karpinsky Dmitry V.^ORCID,Kim Yunseok^ORCID,Kalinin Sergei V.^ORCID

Funder

Department of Energy Basic Energy Sciences Materials Sciences and Engineering Division

Center for Nanophase Materials Sciences

Division of Scientific User Facilities

BES

US DOE

Samsung Advanced Institute of Technology

European Union’s Horizon 2020 research and innovation program

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference81 articles.

1. Ferroelectricity in hafnium oxide thin films;Boscke;J. Appl. Phys. Lett.,2011

2. Unveiling the double-well energy landscape in a ferroelectric layer;Hoffmann;Nature,2019

3. Review and perspective on ferroelectric HfO2-based thin films for memory applications;Park;MRS Commun,2018

4. Investigation of the retention performance of an ultra-thin HfO2 resistance switching layer in an integrated memory device;Kim;J. Appl. Phys.,2018

5. Complex internal bias fields in ferroelectric hafnium oxide;Schenk;ACS Appl. Mater. Interfaces,2015

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