Complex Internal Bias Fields in Ferroelectric Hafnium Oxide
Author:
Affiliation:
1. NaMLab gGmbH, Noethnitzer Strasse 64, D-01187 Dresden, Germany
2. Chair of Nanoelectronic Materials, TU Dresden, D-01062 Dresden, Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.5b05773
Reference53 articles.
1. Ferroelectricity in hafnium oxide thin films
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4. Ferroelectricity in Simple Binary ZrO2 and HfO2
5. Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight
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