High temperature growth of aluminium doped zirconium oxide via post-sputter oxidation of Al–Zr films with different composition-Reference-Cited by-同舟云学术

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High temperature growth of aluminium doped zirconium oxide via post-sputter oxidation of Al–Zr films with different composition

Published:2020-01 Issue: Volume:813 Page:152206
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Lim Way Foong^ORCID,Hassan Zainuriah,Quah Hock Jin^ORCID

Funder

Universiti Sains Malaysia

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference59 articles.

1. Effects of annealing time on the electrical properties of Y2O3 gate on silicon;Quah;J. Exp. Nanosci.,2015

2. Effects of post-deposition annealing time in oxygen ambient on Y2O3 film deposited on silicon substrate;Quah;Mater. Res. Innov.,2014

3. Physical and electrical characteristics of metal-organic decomposed CeO2 gate spin-coated on 4H-SiC;Lim;Appl. Phys. A,2011

4. Study of molar ratio on the characteristics of metal-organic decomposed LaxCe1-xOz film as a metal reactive oxide on Si substrate;Lim;J. Alloy. Comp.,2013

5. Chemical deposition of Al2O3 thin films on Si substrates;Vitanov;Thin Solid Films,2009

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation and characterisation of aluminium zirconium oxide for metal‐oxide‐semiconductor capacitor;International Journal of Energy Research;2020-07-23

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