Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers-Reference-Cited by-同舟云学术

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Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers

Published:2010-08 Issue:1 Volume:504 Page:146-150
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Janardhanam V.,Lee Hoon-Ki,Shim Kyu-Hwan,Hong Hyo-Bong,Lee Soo-Hyung,Ahn Kwang-Soon,Choi Chel-Jong

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference24 articles.

1. A new method to fabricate Au/n-type InP Schottky contacts with an interfacial layer

2. Physics of Semiconductor Devices;Sze,1981

3. Recent advances in Schottky barrier concepts

4. Electrical characterization of metal-oxide-InP tunnel diodes based on current-voltage, admittance and low frequency noise measurements

5. Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111)

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