Depth-controllable ultra shallow Indium Gallium Zinc Oxide/Gallium Arsenide hetero junction diode-Reference-Cited by-同舟云学术

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Depth-controllable ultra shallow Indium Gallium Zinc Oxide/Gallium Arsenide hetero junction diode

Published:2013-06 Issue: Volume:561 Page:228-230
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Yang Seong-Uk,Choi Seung-Ha,Lee Jongtaek,Kim Jeehwan,Jung Woo-Shik,Yu Hyun-Yong,Roh Yonghan,Park Jin-Hong

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference11 articles.

1. Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

2. Nanoscale doping of InAs via sulfur monolayers

3. VLSI Technol. Sys. Appl.;Kirsch;1–2,2012

4. CMOS Scaling with III-V Channels for Improved Performance and Low Power

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1. Role of IGZO thickness for oxygen reservoir control in stacked IGZO/ZrOx layers: Towards reliable, uniform performance of flexible random-access memories;Journal of Alloys and Compounds;2022-11

2. Distinct UV–Visible Responsivity Enhancement of GaAs Photodetectors via Monolithic Integration of Antireflective Nanopillar Structure and UV Absorbing IGZO Layer;Advanced Optical Materials;2022-04-15

3. Modification of band offsets of InGaZnO4/Si heterojunction through nitrogenation treatment;Journal of Alloys and Compounds;2015-10

4. Substrate temperature dependent structural, optical and electrical properties of amorphous InGaZnO thin films;Journal of Alloys and Compounds;2015-05

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