Vegard's-law-like dependence of the activation energy of blistering on the x composition in hydrogenated a-SixGe1-x
Author:
Funder
CNR
MTA
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference56 articles.
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3. Blistering behavior and deuterium retention in tungsten vanadium alloys exposed to deuterium plasma in the linear plasma device STEP;Wang;J. Nucl. Mater.,2018
4. Controllable cracking behavior in Si/Si0.70Ge0.30/Si heterostructure by tuning the H+ implantation energy;Chen;Appl. Phys. Lett.,2017
5. Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films;Broas;Appl. Phys. Lett.,2017
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1. Multiple k -Point Nonadiabatic Molecular Dynamics for Ultrafast Excitations in Periodic Systems: The Example of Photoexcited Silicon;Physical Review Letters;2023-10-10
2. Blister formation in He-H co-implanted InP: A comprehensive atomistic study;Applied Surface Science;2021-06
3. Micro-combinatorial sampling of the optical properties of hydrogenated amorphous $$\hbox {Si}_{1-x}\,\hbox {Ge}_{{x}}$$ for the entire range of compositions towards a database for optoelectronics;Scientific Reports;2020-11-06
4. Microstructural evolution of helium-irradiated 6H–SiC subjected to different irradiation conditions and annealing temperatures: A multiple characterization study;Acta Materialia;2019-12
5. Diffusion and reaction kinetics governing surface blistering in radio frequency sputtered hydrogenated a-SixGe1-x (0 ≤ x ≤ 1) thin films;Thin Solid Films;2019-06
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