Controllable cracking behavior in Si/Si0.70Ge0.30/Si heterostructure by tuning the H+ implantation energy-Reference-Cited by-同舟云学术

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Controllable cracking behavior in Si/Si0.70Ge0.30/Si heterostructure by tuning the H+ implantation energy

Published:2017-08-07 Issue:6 Volume:111 Page:062104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Da¹,Zhang Nan¹,Wang Bei¹,Xu Anli¹,Li Ya¹,Yang Siwei²,Wang Gang¹,Guo Qinglei³

Affiliation:

1. Department of Microelectronic Science and Engineering, Faculty of Science, Ningbo University, Ningbo 315211, China

2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200500, China

3. Department of Materials Science, Fudan University, Shanghai 200433, China

Funder

General Financial Grant from China Postdoctoral Science Foundation

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4996892

Reference19 articles.

1. Frontiers of silicon-on-insulator

2. Hydrogen induced silicon surface layer cleavage

3. Narrow fluence window and giant isotope effect in low-energy hydrogen ion blistering of silicon

4. Fabrication of SOI substrates with ultra-thin Si layers

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced cracking in Si/B-doped Si0.70Ge0.30/Si heterostructures via hydrogen trapping effect;Journal of Vacuum Science & Technology B;2018-11

2. Vegard's-law-like dependence of the activation energy of blistering on the x composition in hydrogenated a-SixGe1-x;Journal of Alloys and Compounds;2018-09

3. Strain engineering and mechanical assembly of silicon/germanium nanomembranes;Materials Science and Engineering: R: Reports;2018-06

4. Exceptional cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si heterostructures;Applied Physics Express;2017-11-28

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