Author:
Fu Bo,Jian Guangzhong,Mu Wenxiang,Li Yang,Wang Huanyang,Jia Zhitai,Li Yanbin,Long Shibing,Shi Yujun,Tao Xutang
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference62 articles.
1. A review of β-Ga2O3 single crystal defects, their effects on device performance and their formation mechanism;Fu;J. Semicond.,2019
2. Recent progress on the electronic structure, defect, and doping properties of Ga2O3;Zhang;APL Mater.,2020
3. The dawn of Ga2O3 HEMTs for high power electronics-A review;Singh;Mater. Sci. Semicond. Process.,2020
4. Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications;Hou;J. Phys. D: Appl. Phys.,2020
5. Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ions;Galazka;J. Cryst. Growth,2020
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