Crystallization characteristic and structure of hafnium addition in germanium antimony thin films for phase change memory-Reference-Cited by-同舟云学术

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Crystallization characteristic and structure of hafnium addition in germanium antimony thin films for phase change memory

Published:2021-05 Issue: Volume:864 Page:158893
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Hua Sicong,Zhao Zihan,Su Xiao,Zhai Jiwei,Song Sannian,Song Zhitang

Funder

Science and Technology Commission of Shanghai Municipality

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference40 articles.

1. Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices;Nukala;Nat. Commun.,2016

2. Sc-centered octahedron enables high-speed phase change memory with improved data retention and reduced power consumption;Wang;ACS Appl. Mater. Interfaces,2019

3. Ultra-long retention and low power consumption of superlattice-like Ge50Te50/Ge thin films for phase change memory application;Zhang;ECS J. Solid State Sci. Technol.,2019

4. Phase-change superlattice materials toward low power consumption and high density data storage: microscopic picture, working principles, and optimization;Li;Adv. Funct. Mater.,2018

5. Reversible electrical switching phenomena in disordered structures;Ovshinsky;Phys. Rev. Lett.,1968

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1. Thickness dependence and crystallization properties of amorphous GeTe thin films on silicon dioxide;Physica Scripta;2024-09-12

2. Research on Improved Crystallization Properties and Underlying Mechanism of the Sb₂Te₃ Phase-Change Thin Film by Inserting Sn₁₅Sb₈₅ Layers;ACS Applied Materials & Interfaces;2024-06-04

3. Modeling and Simulation of Phase Change Memory Using Digital Logic Implementation Approach;Journal of Nanoelectronics and Optoelectronics;2024-05-01

4. C/Sb2Te3 phase-change heterostructure films with low resistance drift for multilevel phase change memories;Journal of Alloys and Compounds;2023-05

5. Effect of vacuum annealing on structural and electrical properties of germanium telluride thin films;Materials Research Bulletin;2022-02

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