Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices

Author:

Nukala Pavan,Lin Chia-Chun,Composto Russell,Agarwal Ritesh

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

Reference36 articles.

1. Wong, H.-S.P. et al. Phase change memory. Proc. IEEE 98, 2201–2227 (2010) .

2. Bez, R. & Pirovano, A. Non-volatile memory technologies: emerging concepts and new materials. Mater. Sc. Semicond. Process. 7, 349–355 (2004) .

3. Pirovano, A. et al. in IEDM '03 Technical Digest IEEE International Electron Devices Meeting, 699–702 (Washington, DC, USA, 2003) .

4. Chen, Y. C. et al. in IEDM '06 International Electron Devices Meeting, 1–4 (San Francisco, CA, USA, 2006) .

5. Lankhorst, M. H., Ketelaars, B. W. & Wolters, R. A. Low-cost and nanoscale non-volatile memory concept for future silicon chips. Nat. Mater. 4, 347–352 (2005) .

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