Annealing effect and leakage current transport mechanisms of high k ternary GdAlOx gate dielectrics-Reference-Cited by-同舟云学术

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Annealing effect and leakage current transport mechanisms of high k ternary GdAlOx gate dielectrics

Published:2019-06 Issue: Volume:791 Page:839-846
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Li Shuan,Wu Yanqing,Yu Hongen,Fu Kai,Zheng Jie,Li Xingguo,Tian Wenhuai

Funder

MOST

NSFC

Beijing Municipal Commission of Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference50 articles.

1. High-K materials and metal gates for CMOS applications;Robertson;Mater. Sci. Eng. R,2015

2. Future semiconductor material requirements and innovations as projected in the ITRS 2005 roadmap;Arden;Mater. Sci. Eng. B,2006

3. A review of gate tunneling current in MOS devices;Ranuárez;Microelectron. Reliab.,2006

4. Electrical properties of high-κ gate dielectrics: challenges, current issues, and possible solutions;Houssa;Mater. Sci. Eng. R,2006

5. Interface engineering and chemistry of Hf-based high-k dielectrics on III-V substrates;He;Surf. Sci. Rep.,2013

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