The role of the sequence of plasma treatment and high temperature annealing on solution-processed a-IMZO thin film transistor-Reference-Cited by-同舟云学术

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The role of the sequence of plasma treatment and high temperature annealing on solution-processed a-IMZO thin film transistor

Published:2019-07 Issue: Volume:793 Page:369-374
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Cheng Jin,Li Xuyang,Guo Jian,Xu Haifei,Chen Yonghua,He Yunfei,Xue Jianshe,Zhang Ting,Yu Zhinong

Funder

National Basic Research Program of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference31 articles.

1. Advanced liquid-crystal materials for TFT monitor and TV applications

2. High-performance hydrogenated amorphous-Si TFT for AMLCD and AMOLED applications

3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

4. The 2016 oxide electronic materials and oxide interfaces roadmap

5. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer;Materials Science in Semiconductor Processing;2024-04

2. Enhanced electrical performance of InGaSnO thin-film transistors by designing a dual-active-layer structure;Applied Surface Science;2024-03

3. The improved properties of solution-based InGaSnO (IGTO) thin film transistor using the modification of InZnO (IZO) layer;Vacuum;2023-09

4. Performance Improvement of Amorphous Thin-Film Transistors With Solution-Processed InZnO/InMgZnO Bilayer Channels;IEEE Transactions on Electron Devices;2023-08

5. Research progress on crystalline IGZO thin film transistor;Chinese Journal of Liquid Crystals and Displays;2023

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