Two dimensional MoS2/graphene p-n heterojunction diode: Fabrication and electronic characteristics-Reference-Cited by-同舟云学术

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Two dimensional MoS2/graphene p-n heterojunction diode: Fabrication and electronic characteristics

Published:2016-06 Issue: Volume:671 Page:276-282
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Su Wei-Jhih,Chang Hsuan-Chen,Shih Yi-Ting,Wang Yi-Ping,Hsu Hung-Pin,Huang Ying-Sheng,Lee Kuei-Yi

Funder

Ministry of Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference32 articles.

1. Crystal structures of tungsten disulfide and diselenide;Schutte;J. Solid State Chem.,1987

2. Effects of pressure and temperature on exciton absorption and band structure of layer crystals: molybdenum disulphide;Connell;J. Phys. Chem. Solids,1969

3. Structures based on the 3-connected net 103-b;Wells;J. Solid State Chem.,1984

4. Band-gap transition induced by interlayer van der Waals interaction in MoS2;Han;Phys. Rev. B,2011

5. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides;Wang;Nat. Nanotechnol.,2012

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