Bending stability of flexible amorphous IGZO thin film transistors with transparent IZO/Ag/IZO oxide–metal–oxide electrodes-Reference-Cited by-同舟云学术

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Bending stability of flexible amorphous IGZO thin film transistors with transparent IZO/Ag/IZO oxide–metal–oxide electrodes

Published:2016-12 Issue: Volume:688 Page:1108-1114
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Kim Yun Cheol,Lee Su Jeong,Oh Il-Kwon,Seo Seunggi,Kim Hyungjun,Myoung Jae-Min

Funder

IT R&D program of MOTIE/KEIT

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference47 articles.

1. Ultra-flexible, “invisible” thin-film transistors enabled by amorphous metal oxide/polymer channel layer blends;Yu;Adv. Mater.,2015

2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;Nomura;Nature,2004

3. Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering;Carcia;Appl. Phys. Lett.,2003

4. Flexible organic transistors and circuits with extreme bending stability;Sekitani;Nat. Mater.,2010

5. Transparent and conducting ITO films: new developments and Applications;Granqvist;Thin Solid Films,2002

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