Electrical transport mechanisms and structure of hydrogenated and non-hydrogenated nanocrystalline Ga1−xMnxAs films-Reference-Cited by-同舟云学术

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Electrical transport mechanisms and structure of hydrogenated and non-hydrogenated nanocrystalline Ga1−xMnxAs films

Published:2015-05 Issue: Volume:630 Page:78-83
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Angelico João C.,Pereira André L.J.,de Arruda Larisa B.,Dias da Silva José H.

Funder

FAPESP

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference30 articles.

1. Bridging semiconductor and magnetism

2. Current-induced domain-wall switching in a ferromagnetic semiconductor structure

3. Spintronics: Fundamentals and applications

4. Electrical and Optical Control of Ferromagnetism in III-V Semiconductor Heterostructures at High Temperature (∼100 K)

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Prospects for Application of Gallium Arsenide Doped with Transition Metals as a Material for Spintronics;Nanostructure Science and Technology;2018

2. Variation of exchange energy in δ-(Ga,Mn)As films under tensile strain: PBE and LDA+U calculations;RSC Advances;2015

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