Prospects for Application of Gallium Arsenide Doped with Transition Metals as a Material for Spintronics
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Publisher
Springer International Publishing
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http://link.springer.com/content/pdf/10.1007/978-3-319-91896-9_5
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1. Effects of manganese concentration and temperature on the ferromagnetism of manganese‐doped gallium arsenide semiconductor;Nano Select;2023-11-22
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