Polymorphous GdScO 3 as high permittivity dielectric-Reference-Cited by-同舟云学术

Polymorphous GdScO 3 as high permittivity dielectric

Published:2015-12 Issue: Volume:651 Page:514-520
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Schäfer A.,Rahmanizadeh K.,Bihlmayer G.,Luysberg M.,Wendt F.,Besmehn A.,Fox A.,Schnee M.,Niu G.,Schroeder T.,Mantl S.,Hardtdegen H.,Mikulics M.,Schubert J.^ORCID

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference43 articles.

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3. High mobility strained Si0.5Ge0.5/SSOI short channel field effect transistors with TiN/GdScO3 gate stack;Minamisawa;Microelectron. Eng.,2011

4. p-Type Ion Implantation in Tensile Si/Compressive Si0.5Ge0.5/Tensile Strained Si Heterostructures;Minamisawa;J. Electrochem. Soc.,2011

5. Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics;Cico;J. Vac. Sci. Technol. B,2011

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