Author:
Wang Shujie,Sun Niefeng,Fu Lijie,Wang Yang,Li ZaoYang,Chen Chunmei,Shao Huimin,Shi Yanlei,Li Xiaolan,Lin Jiajie,Zhou Xinyu,Gao Peng,Ou Xin,Jiang Jian,Zhang Xiaodan,Liu Huisheng,Sun Tongnian
Funder
Hebei Provincial Key Research Projects
National Natural Science Foundation of China
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference37 articles.
1. A review of InP/InAlAs/InGaAs based transistors for high frequency applications;Ajayan;Superlattices Microstruct.,2015
2. InP high electron mobility transistors for submillimeter wave and terahertz frequency applications: a review;Ajayan;Int. J. Electron. Commun.,2018
3. H. Hamada, T. Fujimura, I. Abdo, K. Okada, H.J. Song, H. Sugiyama, H. Matsuzaki, H. Nosaka, 300-GHz, 100-Gb/s InP-HEMT wireless transceiver using a 300-GHz fundamental mixer, 2018 IEEE/MTT-S International Microwave Symposium. 2018, 1480–1483.
4. Preparation and some characteristics of single-crystal indium phosphide;Harman;J. Electrochem. Soc.,1958
5. Improved SSD growth of InP single crystals;Moravec;J. Cryst. Growth,1981
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献