Phosphorus escaping phenomena during the growth of InP crystal by in-situ liquid-encapsulated Czochralski method and P-rich-related defects in InP crystal
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Published:2023-09
Issue:27
Volume:34
Page:
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ISSN:0957-4522
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Container-title:Journal of Materials Science: Materials in Electronics
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language:en
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Short-container-title:J Mater Sci: Mater Electron
Author:
Chen Chunmei, Yang RuixiaORCID, Sun Niefeng, Wang Shujie, Shi Yanlei, Li Xiaolan, Wang Yang, Shao Huimin, Bu Aimin, Liu Huisheng, Zhang Xiaodan, Jiang Jian, Li Yaqi, Zhao Hongfei, Kang Yong, Xue Jing, Zhang Xin, Gu Weixia
Funder
National Natural Science Foundation of China
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference29 articles.
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