Effects of sputtering pressure and post-metallization annealing on the physical properties of rf-sputtered Y2O3 films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference39 articles.
1. Electrical properties of ZnO-based bottom-gate thin film transistors fabricated by using radio frequency magnetron sputtering
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