Electrical properties of ZnO-based bottom-gate thin film transistors fabricated by using radio frequency magnetron sputtering
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference20 articles.
1. Transparent thin film transistors using ZnO as an active channel layer and their electrical properties
2. Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
3. ZnO-based transparent thin-film transistors
4. High Mobility Thin Film Transistors with Transparent ZnO Channels
5. A comparison of zinc oxide thin-film transistors on silicon oxide and silicon nitride gate dielectrics
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