Self-consistent simulation of carrier confinement characteristics in (AlyGa1−yN/AlN)SLs/GaN/(InxGa1−xN/GaN)MQW/GaN heterostructures-Reference-Cited by-同舟云学术

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Self-consistent simulation of carrier confinement characteristics in (AlyGa1−yN/AlN)SLs/GaN/(InxGa1−xN/GaN)MQW/GaN heterostructures

Published:2012-05 Issue: Volume:523 Page:88-93
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Ding Jieqin,Wang Xiaoliang,Xiao Hongling,Wang Cuimei,Yin Haibo,Chen Hong,Feng Chun,Jiang Lijuan

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference27 articles.

1. GaN, AlN, and InN: A review

2. Shortest wavelength semiconductor laser diode

3. The Polarity of GaN: a Critical Review

4. Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates

5. High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

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1. Numerical Modeling of the Electronic and Electrical Characteristics of InGaN/GaN-MQW Solar Cells;Materials;2019-04-16

2. Effect of temperature on electronic and electrical behavior of InGaN double hetero-junction p-i-n solar cells;Journal of Materials Science: Materials in Electronics;2019-01-14

3. Simulation Study of Enhancement-Mode InAlN/GaN HEMT with InGaN Cap Layer;Journal of Nanoscience and Nanotechnology;2018-11-01

4. A self-consistent numerical approach for characterizing the band structures and gain spectrum of tensile-strained and n+-doped Ge/GeSi quantum wells;Journal of Physics D: Applied Physics;2017-11-01

5. Analytical modeling of polarization effects in InGaN double hetero-junction p-i-n solar cells;Superlattices and Microstructures;2016-12

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