Epitaxial 0.65PbMg1/3Nb2/3O3–0.35PbTiO3 (PMN–PT) thin films grown on LaNiO3/CeO2/YSZ buffered Si substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference22 articles.
1. Highly (111)-oriented and pyrochlore-free PMN–PT thin films derived from a modified sol–gel process
2. Orienting Ferroelectric Films
3. Influence of LaNiO3 bottom electrode on the structural and physical properties of ferroelectric capacitors
4. Growth of Epitaxial (110) 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 Thin Films on r-Plane Sapphire Substrates by RF Magnetron Sputtering
5. Investigation of biferroic properties in La0.6Sr0.4MnO3/0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 epitaxial bilayered heterostructures
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1. Evolution of Microcracks in Epitaxial CeO2 Thin Films on YSZ-Buffered Si;Electronic Materials Letters;2023-07-25
2. Growth of heteroepitaxial La and Mn co-substituted BiFeO3 thin films on Si (100) substrate by pulsed laser deposition;Applied Physics A;2022-08-10
3. Epitaxial growth of neodymia stabilized zirconia on Si(001) substrate using dynamic aurora PLD;Journal of the Ceramic Society of Japan;2020-10-01
4. Effects of the buffer layer on piezoelectric and ferroelectric properties of PMN-PT film-on-Ni foil composites;Journal of Materials Science: Materials in Electronics;2019-11-20
5. PMN-PT thin films on La0.67Ca0.33MnO3 seeded platinized glass substrate: phase formation, dielectric and ferroelectric studies;Materials Research Express;2018-08-10
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