Author:
Fedotov A.K.,Velichko O.I.,Dobrushkin V.A.
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference24 articles.
1. A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip Effect
2. General Theory of Phosphorus and Arsenic Diffusions in Silicon
3. O.I. Velichko, in: I.I. Danilovich, A.G. Koval’, V.A. Labunov, et al. (Eds.), Proceedings of VII International Conference “Vzaimodeistvie Atomnyh Chastits s Tverdym Telom (Interaction of Atomic Particles with Solid)”, Part 2, Minsk, Belarus, 1984, p. 180 (in Russian).
4. Enhanced ‘‘tail’’ diffusion of phosphorus and boron in silicon: Self‐interstitial phenomena
5. Plateau and kink in P profiles diffused into Si: A result of strong bimolecular recombination?
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