Plateau and kink in P profiles diffused into Si: A result of strong bimolecular recombination?
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100344
Reference10 articles.
1. Diffusion of Group V Impurity in Silicon
2. A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip Effect
3. Numerical Solution of Phosphorus Diffusion Equation in Silicon
4. High concentration diffusion of P in Si : a percolation problem ?
5. Dopant diffusion in silicon: A consistent view involving nonequilibrium defects
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