Investigations of GaN metal-oxide-semiconductor capacitors with sputtered HfO2 gate dielectrics
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference20 articles.
1. Dynamic current-voltage characteristics of III-N HFETs
2. AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors
3. Flicker noise of GaN-based heterostructure field-effect transistors with Si-doped AlGaN carrier injection layer
4. DC Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors on Freestanding GaN Substrates
5. AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
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