Effect of CH4/SiCl4 ratio on the composition and microstructure of 〈110〉-oriented β-SiC bulks by halide CVD-Reference-Cited by-同舟云学术

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Effect of CH4/SiCl4 ratio on the composition and microstructure of 〈110〉-oriented β-SiC bulks by halide CVD

Published:2017-04 Issue:4 Volume:37 Page:1217-1223
ISSN:0955-2219
Container-title:Journal of the European Ceramic Society
language:en
Short-container-title:Journal of the European Ceramic Society

Author:

Tu Rong,Zheng Dingheng,Cheng Hong,Hu Mingwei,Zhang Song,Han Mingxu,Goto Takashi,Zhang Lianmeng

Funder

National Natural Science Foundation of China

111 Project

International Science & Technology Cooperation Program of China

Natural Science Foundation of Hubei Province

Fundamental Research Funds for the Central Universities

Publisher

Elsevier BV

Subject

Materials Chemistry,Ceramics and Composites

Reference41 articles.

1. Silicon carbide and diamond for high temperature device applications;Willander;J. Mater. Sci. Mater. Electron.,2006

2. Growth and characteristics of polycrystalline 3C-SiC films for extreme environment micro/nano-electromechanical systems;Kim;Sens. Actuators, A Phys.,2009

3. Preparation of fine grained SiC layer by fluidized bed chemical vapor deposition with pulsed propylene;Liu;J. Am. Ceram. Soc.,2016

4. Low temperature hetero-epitaxial growth of 3C-SiC films on Si utilizing microwave plasma CVD;Zhuang;Chem. Vap. Depos.,2013

5. Effect of deposition atmosphere on the phase composition and microstructure of silicon carbide films prepared by laser chemical vapour deposition;Hashimoto;Ceram. Int.,2015

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2. Grain size and grain boundary characteristics on the out-plane thermal conductivity of <111>-oriented CVD 3C–SiC;Ceramics International;2024-07

3. Ductile-Brittle Transition Mechanism of Highly-Oriented 3c-Sic in Elid;2024

4. Understanding of highly-oriented 3C-SiC ductile-brittle transition mechanism in ELID ultra-precision grinding;Materials Characterization;2023-09

5. High-throughput thermodynamic analysis of the CVD of SiC from the SiCl4-CH4-H2 system;Surface and Coatings Technology;2023-09

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