Electronic surface states of II–VI compound semiconductors
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference48 articles.
1. Surface structure of ZnTe (110) as determined from dynamical analysis of low-energy-electron diffraction intensities
2. Calculation of low-energy-electron-diffraction intensities fromZnO(101¯0). II. Influence of calculational procedure, model potential, and second-layer structural distortions
3. Low-energy-electron-diffraction analysis of the atomic geometry of ZnO (10¯10)
4. LEED intensity analysis and electron spectroscopy of ZnSe(110)
5. Approach to structure determination of compound semiconductor surfaces by kinematical LEED calculations: GaAs(110) and ZnSe(110)
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