Calculation of low-energy-electron-diffraction intensities fromZnO(101¯0). II. Influence of calculational procedure, model potential, and second-layer structural distortions-Reference-Cited by-同舟云学术

Calculation of low-energy-electron-diffraction intensities fromZnO(101¯0). II. Influence of calculational procedure, model potential, and second-layer structural distortions

Published:1978-10-15 Issue:8 Volume:18 Page:4225-4240
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Duke C. B.,Meyer R. J.,Paton A.,Mark P.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.18.4225/fulltext

Reference34 articles.

1. Calculations of low-energy electron diffraction intensities from the polar faces of ZnO

2. Atomic geometry of the low‐index surfaces of ZnO: LEED analysis

3. Atomic geometry of cleavage surfaces of tetrahedrally coordinated compound semiconductors

4. Low-energy-electron-diffraction analysis of the atomic geometry of ZnO (10¯10)

5. Surface structures of compound semiconductors

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