Surface structure of ZnTe (110) as determined from dynamical analysis of low-energy-electron diffraction intensities
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.22.2875/fulltext
Reference40 articles.
1. Semiconductor Surface Reconstruction: The Rippled Geometry of GaAs(110)
2. Atomic geometry of cleavage surfaces of tetrahedrally coordinated compound semiconductors
3. LEED intensity analysis and electron spectroscopy of ZnSe(110)
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5. Approach to structure determination of compound semiconductor surfaces by kinematical LEED calculations: GaAs(110) and ZnSe(110)
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