Characterization of orientation-dependent etching properties of single-crystal silicon: effects of KOH concentration

Author:

Sato Kazuo,Shikida Mitsuhiro,Matsushima Yoshihiro,Yamashiro Takashi,Asaumi Kazuo,Iriye Yasuroh,Yamamoto Masaharu

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Simulation of two dimensional etch profile of silicon during orientation-dependent anisotropic etching;Koide,1991

2. Theory to predict etching shapes in quartz and application to design devices;Ueda;Trans. Soc. Instrument Control Eng.,1987

3. Correlation of the anisotropic etching of single-crystal silicon spheres and wafers;Weirauch;J. Appl. Phys.,1975

4. Anisotropic etching of crystalline silicon in alkaline solutions;Seidel;J. Electrochem. Soc.,1990

5. The wagon wheel method applied around the [011] zone of silicon;Kendall;Electrochem. Soc. Extended Abstr., Montreal, Canada,1982

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