Highly sensitive mangetotransistor with combined phenomena of Hall effect and emitter injection modulation operated in the saturation mode-Reference-Cited by-同舟云学术

Highly sensitive mangetotransistor with combined phenomena of Hall effect and emitter injection modulation operated in the saturation mode

Published:1996-06 Issue:1-3 Volume:54 Page:641-645
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Kang Uk-Song,Lee Seung-Ki,Han Min-Koo

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Integrated semiconductor magnetic field sensors;Baltes,1986

2. Magnetic transistor behavior explained by modulation of emitter injection — not carrier deflection;Vinal;IEEE Electron Device Lett.,1982

3. Comment on ‘Magnetic transistor behavior explained by modulation of emitter injection — not carrier deflection’;Zieren;IEEE Electron Device Lett.,1982

4. A novel magnetotransistor based on the drift current in the emitter;Lee,1991

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