1. R. D. Tikhonov, “Lateral and planar bipolar magnetoresistors,” Nano- i Microsist. Tekhn., No. 6, 31–36 (2010).
2. L. Ristic, M. Doan, and M. Paranjape, “3-D magnetic field sensor realized as a lateral magnetotransistor in CMOS technology,” Sens. Actuators, 90, 770–775 (1999).
3. I. M. Mitnikova, T. V. Persiyanov, G. I. Rekalova, and G. A. Shtyubner, “A study of the characteristics of lateral silicon magnetotransistors with two measuring collectors,” FTP, 12, No. 1, 48–50 (1978).
4. L. J. Ristic, H. P. Baltes, T. Smy, and I. Filanovsky, “Lateral magnetoresistor with a linear response to the magnetic field,” IEEE Trans. Electron. Dev., 36, No. 6, 1076–1086 (1989).
5. Uk-Song, Seung-Ki Lee, and Min-Koo Han, “Highly sensitive magnetoresistor with combined phenomena of Hall effect and emitter modulation operated in the saturation mode,” Sens. Actuators, A54, 641–645 (1996).