1. Ristic, L.J., Baltes, H.P., Smy, T., and Filanovsky, I., Suppressed sidewall injection magnetotransistor with focused emitter injection and carrier double deflection, IEEE Electron Devices Letters, 1987, vol. 9, pp. 395–397.
2. Metz, M., Offset in CMOS magnetotransistors, analysis and reduction, Doctor Sci. (Nat.) Diss., Zurich: 1999, pp. 1–155.
3. Kang, U.-S., Lee, S.-K., and Han, M.-K., Highly sensitive magnetotransistor with combined phenomena of Hall effect and emitter injection modulation operated in the saturation mode, Sensors and Actuators, 1996, vol. A54, pp. 641–645.
4. Amelichev, V.V., Galushkov, A.I., Mirgorodskii, Yu.N, et al., Simulation of a bipolar dual-collector magnetotransistor and determination of the regime of sensitivity variation thermocompensation, Datchiki i sistemy, 1999, vol. 6, pp. 38–42.
5. Kozlov, A.V., Korolev, M.A., Smirnov, S.Yu, et al., Study of the transformation and relative magnetosensitivity of a triple-collector bipolar magnetosensitive transistor, Mikroelektronika, 2003, vol. 32(3), pp. 219–225.