Author:
Takao Hidekuni,Matsumoto Yoshinori,Seo Heedon,Ishida Makoto,Nakamura Tetsuro
Subject
Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Three dimensional vector accelerometer using SOI structure for high temperature;Takao,1995
2. High temperature pressure sensor using double SOI structures with two Al2O3 films;Lee;Sensors and Actuators A,1994
3. Analytical and FEM modeling of piezoresistive silicon accelerometers: predictions and limitations compared to experiments;Tschan;Sensors Mater.,1992
4. A novel silicon accelerometer with a surrounding mass structure;Yamada;Sensors and Actuators,1990
5. Temperature sensitivity in silicon piezoresistive pressure transducers;Kim;IEEE Trans. Electron Devices,1983
Cited by
23 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献