Mechanical sensors based on laser-recrystallized SOI structures-Reference-Cited by-同舟云学术

Mechanical sensors based on laser-recrystallized SOI structures

Published:1997-06 Issue:1-3 Volume:61 Page:400-404
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Druzhinin A.,Lavitska E.,Maryamova I.,Voronin V.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Physical model of SOI MOS-transistor for non-equilibrium state;Druzhinin;Electronnaya Technika, ser. 3. Microelectronika,1990

2. Photosensing structures on the basis of laser-recrystallized polysilicon layers;Druzhinin;Fizicheskaya Electronica, Lvov,1990

3. Laser-recrystallized polysilicon layers in sensors;Voronin;Sensors and Actuators A,1997

4. Laser-solid interactions and transient thermal processing of materials;Hode;J. Phys. Colloq. C5. supp. 10,1983

5. The electrical properties of polycrystalline silicon films;Setn;J. Appl. Phys.,1975

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