Anisotropic etching rates of single-crystal silicon for TMAH water solution as a function of crystallographic orientation-Reference-Cited by-同舟云学术

Anisotropic etching rates of single-crystal silicon for TMAH water solution as a function of crystallographic orientation

Published:1999-03 Issue:1-2 Volume:73 Page:131-137
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Sato Kazuo,Shikida Mitsuhiro,Yamashiro Takashi,Asaumi Kazuo,Iriye Yasuroh,Yamamoto Masaharu

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. A. Koide, K. Sato, S. Tanaka, Simulation of two dimensional etch profile of silicon during orientation-dependent anisotropic etching, Proc. of IEEE Micro Electro Mechanical Systems (MEMS) Workshop, Nara, Japan, Feb. 1991, pp. 216–220.

2. Anisotropic multi-step etch processes of silicon;Frühauf;J. Micromech. Microeng.,1997

3. Characterization of orientation-dependent etching properties of single-crystal silicon: effects of KOH concentration;Sato;Sensors and Actuators A,1998

4. Anisotropic etching of silicon in TMAH solutions;Tabata;Sensors and Actuators A,1992

5. Orientation-dependent etching rate of single crystal silicon related to etching temperature;Koide;J. Jpn. Soc. Precision Eng.,1995

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