Wet etching of silicon structures bounded by (311) sidewalls-Reference-Cited by-同舟云学术

Wet etching of silicon structures bounded by (311) sidewalls

Published:2000-05 Issue: Volume:51-52 Page:555-566
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Resnik D,Vrtacnik D,Aljancic U,Amon S

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Overpressure protection in silicon low pressure sensor;Aljancic,1996

2. Maskless etching of three-dimensional silicon structures in KOH;Li;Sensors Actuators,1996

3. A study of two-step silicon anisotropic etching for a polygon-shaped microstructure using KOH solution;Kang;Sensors Actuators,1997

4. Anisotropic etching of silicon in TMAH;Tabata;Sensors Actuators,1992

5. A novel micromachining technology for multilevel structures of silicon;Bao;Sensors Actuators,1997

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