Effect of Substrate Faceting on Epitaxial Lead Sulfide Thin Films Deposited from a Solution onto GaAs(100)-Reference-Cited by-同舟云学术

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Effect of Substrate Faceting on Epitaxial Lead Sulfide Thin Films Deposited from a Solution onto GaAs(100)

Published:2023-06-12 Issue:7 Volume:23 Page:5314-5322
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Rudnikov-Keinan Taissia¹²,Ezersky Vladimir²,Maman Nitzan²,Golan Yuval¹²^ORCID

Affiliation:

1. Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 8410501, Israel

2. Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, Beer-Sheva 8410501, Israel

Funder

Israel Science Foundation

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c00515

Reference41 articles.

1. Chemical Etching Characteristics of ( 001 ) GaAs

2. Selective wet etching of a heterostructure with citric acid-hydrogen peroxide solutions for pseudomorphic GaAs/AlxGa1−xAs/InyGa1−yAs heterojunction field effect transister fabrication

3. Etch Rates and Selectivities of Citric Acid/Hydrogen Peroxide on GaAs , Al0.3Ga0.7As , In0.2Ga0.8As , In0.53Ga0.47As , In0.52Al0.48As , and InP

4. Preferential Etching and Etched Profile of GaAs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of GaAs Substrate Micropatterning on Threading Dislocation Density in Solution-Deposited Lead Sulfide Thin Films;ACS Applied Electronic Materials;2024-05-29

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