Selective wet etching of a heterostructure with citric acid-hydrogen peroxide solutions for pseudomorphic GaAs/AlxGa1−xAs/InyGa1−yAs heterojunction field effect transister fabrication-Reference-Cited by-同舟云学术

Selective wet etching of a heterostructure with citric acid-hydrogen peroxide solutions for pseudomorphic GaAs/AlxGa1−xAs/InyGa1−yAs heterojunction field effect transister fabrication

Published:1995-12 Issue:1-3 Volume:35 Page:230-233
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Lee H.J.,Tse M.S.,Radhakrishnan K.,Prasad K.,Weng J.,Yoon S.F.,Zhou X.,Tan H.S.,Ting S.K.,Leong Y.C.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference9 articles.

1. The resonant-tunneling field-effect transistor: A new negative transconductance device

2. GaAs double heterostructure lasers fabricated by wet chemical etching

3. Optical waveguides in GaAs–AlGaAs epitaxial layers

4. An improved technique for selective etching of GaAs and Ga1−xAlxAs

5. Selective Etching Characteristics of Peroxide/Ammonium‐Hydroxide Solutions for GaAs / Al0.16Ga0.84As

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of GaAs Substrate Micropatterning on Threading Dislocation Density in Solution-Deposited Lead Sulfide Thin Films;ACS Applied Electronic Materials;2024-05-29

2. GaAs-based resonant tunneling diode: Device aspects from design, manufacturing, characterization and applications;Journal of Semiconductors;2023-10-01

3. Effect of Substrate Faceting on Epitaxial Lead Sulfide Thin Films Deposited from a Solution onto GaAs(100);Crystal Growth & Design;2023-06-12

4. Impact of GaAs(100) surface preparation on EQE of AZO/Al2O3/p-GaAs photovoltaic structures;Beilstein Journal of Nanotechnology;2021-06-28

5. AlGaAs/InGaAs High-Electron Mobility Transistors Fabricated Using Silicon Nitride Passivation and Selective-Etching Process;Science of Advanced Materials;2021-04-01