Copper metallization for advanced IC: requirements and technological solutions-Reference-Cited by-同舟云学术

Copper metallization for advanced IC: requirements and technological solutions

Published:2000-01 Issue:1-4 Volume:50 Page:391-401
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Morand Y

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. National Technology Roadmap for Semiconductor, SIA, 1997.

2. Multilevel interconnection technologies and futures requirements for logic applications;Brillouet,1997

3. Advanced interconnect scheme analysis: real impact of technological improvements;Lecarval,1998

4. Multi layer metallization;Lerme,1997

5. D.T. Price, R.J. Gutmann, Comparison of dual damascene strategies fabricated with copper interconnects and polymer IMDs, 1998 Proc. Advanced Metallization Conf. (in press).

Cited by 49 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electroplated Copper Additives for Advanced Packaging: A Review;ACS Omega;2024-05-02

2. A Novel laser scanning method for metallization of alumina substrate by copper;Rare Metals;2022-12-09

3. Interconnect Quality and Reliability of 3D Packaging;3D Microelectronic Packaging;2020-11-24

4. Vacuum Arc Plasma Sources. Thin Film Deposition;Plasma and Spot Phenomena in Electrical Arcs;2020

5. Rapid Determination of the Electrodeposition Potential for Cu Superfilling Using a Nanocones Array Structured Electrode;Journal of The Electrochemical Society;2018