Degradation mechanisms in SOI n-channel LDMOSFETs-Reference-Cited by-同舟云学术

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Degradation mechanisms in SOI n-channel LDMOSFETs

Published:2001-11 Issue:1-4 Volume:59 Page:489-495
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Vandooren A,Conley J.F,Cristoloveanu S,Mojarradi M,Kolawa E

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. A. Vandooren, S. Cristoloveanu, M. Mojarradi, E. Kolawa, IEEE Trans. Electron. Dev., (2001) in press.

2. Proceedings of 199th Electrochemical Society Meeting, Washington DC, USA;Vandooren,2001

3. Electrical Characterization of SOI Materials and Devices;Cristoloveanu,1995

4. New method for the extraction of MOSFET parameters

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Layout dependent hot-carrier-injection-induced pLDMOS degradation from a non-destructive characterization viewpoint;Solid-State Electronics;2021-12

2. Effect of Drift Length on Shifts in 400-V SOI LDMOS Breakdown Voltage Due to TID;IEEE Transactions on Nuclear Science;2020-11

3. Safe design for TF-SOI power MOSFETs;Electronics Letters;2006

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