Layout dependent hot-carrier-injection-induced pLDMOS degradation from a non-destructive characterization viewpoint
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. A new lateral power MOSFET for smart power ICs: the LUDMOS concept;Zitouni;Microelectron J,1999
2. LDMOS in SOI technology with very-thin silicon film;Bawedin;Solid-State Electron,2004
3. Influence of design considerations on hot carrier injection degradation of STI-based LDMOS transistors;Alimin,2018
4. On-resistance degradation induced by hot-carrier injection in LDMOS transistors with STI in the drift region;Chen;IEEE Trans EDL,2008
5. Degradation mechanisms in SOI n-channel LDMOSFETs;Vandooren;Microelectron Eng,2001
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