Electron-beam exposure characteristics of a novel Ru-PMMA composite resist-Reference-Cited by-同舟云学术

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Electron-beam exposure characteristics of a novel Ru-PMMA composite resist

Published:1998-03 Issue: Volume:41-42 Page:327-330
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Thomas M.D.R.,Hasko D.G.,Ahmed H.,Brown D.B.,Johnson B.F.G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Fabrication of 5–7 nm wide etched lines in silicon using 100 keV electron‐beam lithography and polymethylmethacrylate resist

2. A nano-composite resist system: A new approach to nanometer pattern fabrication

3. Syntheses, structures and chemistry of the high-nuclearity ruthenium hydrido cluster anions [Ru10H2(CO)25]2? and [Ru11H(CO)27]3?

4. Process Engineering Analysis in Semiconductor Device Fabrication;Middleman,1993

5. Nanowriter: A new high-voltage electron beam lithography system for nanometer-scale fabrication

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of electron-beam exposure on a ruthenium nanocluster polymer;Journal of Applied Physics;2001-07-15

2. Electron-beam-induced conduction in a ruthenium carbonyl nanoparticle polymer;Applied Physics Letters;2000-03-27

3. Fabrication of surface gratings in GaAs and AlGaAs by electron beam lithography and chemically assisted ion beam etching;SPIE Proceedings;1999-09-06

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