Focused ion beam sample preparation, transmission electron microscopy and electron energy loss spectroscopy analysis of advanced CMOS silicon technology interconnections-Reference-Cited by-同舟云学术

Focused ion beam sample preparation, transmission electron microscopy and electron energy loss spectroscopy analysis of advanced CMOS silicon technology interconnections

Published:1997-11 Issue: Volume:37-38 Page:49-57
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Pantel Roland,Auvert Geoffroy,Mascarin Guy

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. ISTFA'91: The 17th International Symposium for Testing and Failure Analysis;Morris,1991

2. Microscopic studies of semiconductor lasers utilizing a combination of transmission electron microscopy, electroluminescence imaging, and focused ion beam sputtering

3. ICEM'13: the 13th International Congres on Electron Microscopy;Pantel,1994

4. Electron Energy Loss Spectroscopy in the Electron Microscope;Egerton,1986

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