Microscopic studies of semiconductor lasers utilizing a combination of transmission electron microscopy, electroluminescence imaging, and focused ion beam sputtering-Reference-Cited by-同舟云学术

Microscopic studies of semiconductor lasers utilizing a combination of transmission electron microscopy, electroluminescence imaging, and focused ion beam sputtering

Published:1993-06-28 Issue:26 Volume:62 Page:3408-3410
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hull R.,Bahnck D.,Stevie F. A.,Koszi L. A.,Chu S. N. G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.109032

Reference8 articles.

1. Degradation of III–V Opto‐Electronic Devices

2. TEM Cross Section Sample Preparation Technique for III–V Compound Semiconductor Device Materials by Chemical Thinning

3. Cellular morphologies in a de-alloying residue

4. A fast preparation technique for high-quality plan view and cross-section TEM specimens of semiconducting materials

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