1. Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source/drain stressors;Ang;Appl. Phys. Lett.,2005
2. Cacho, F., 2005. Etude et simulation de la siliciuration du nickel: application dans les technologies MOS. PhD Thesis, Ecole des Mines de Paris.
3. Strain measurements by convergent-beam electron diffraction: the importance of stress relaxation in lamella preparations;Clement;Appl. Phys. Lett.,2004
4. Clement, L., 2006. Mesure des déformation et des contraintes par diffraction électronique en faisceau convergent (CBED). PhD Thesis. Université Joseph Fourier Grenoble.
5. Measuring strain in semiconductor nanostructures by Convergent Beam Electron Diffraction;Clement,2007