Correlating stress generation and sheet resistance in InAlN/GaN nanoribbon high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4752160
Reference24 articles.
1. Epitaxial III−V Nanowires on Silicon
2. Core/Multishell Nanowire Heterostructures as Multicolor, High-Efficiency Light-Emitting Diodes
3. Controlled Synthesis of AlN/GaN Multiple Quantum Well Nanowire Structures and Their Optical Properties
4. Realization of defect-free epitaxial core-shell GaAs/AlGaAs nanowire heterostructures
5. Ge/Si nanowire heterostructures as high-performance field-effect transistors
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